RJP30H2A TO-263 IGBT NPT Trench Transistor 35A SMD

Features:-

• Trench gate and thin wafer technology (G6H-II series).
•  Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ.
•  High speed switching: tf = 100 ns typ, tf = 180 ns typ.
•  Low leak current: ICES = 1 A max.