K20T60 20A 600V to-247 IGBT Power Transistor

Featured:-

– Very low VCE (sat) 1.5 V (typical).

– Maximum splice temperature 175°C.

– Short circuit withstand time – 5µs.

– High ruggedness, stable temperature operation.

– very high switching speed.

– Positive temperature coefficient in VCE (sat).

– Low EMI.

– EmCon HE diode anti-parallel is very soft, fast recovery.

– Lead plating without pb; RoHS compliant.

Application:-

– Inverter.

– UPS.